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Aluminum in Silicon
Antimony in Silicon
Arsenic in Silicon
Arsenic in Silicon-ULE
Beryllium in GaAs
Beryllium in InP
Beryllium in Silicon
Boron in GaAS
Boron in Silicon-ULE
Boron in Silicon
Fluorine in Silicon
Helium in Silicon
Helium in ZnSe
Hydrogen in Germanium
Hydrogen in Silicon
Hydrogen in SiO2
Hydrogen in ZnSe
Indium in Silicon
Phosphorus in GaAs
Phosphorus in Silicon
Silicon in GaAs |
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Review of the Cormap Optical Dosimetry System
A review of the performance of an extended performance optical metrology system for ion beam dosimetry system with an energy range from 0.25eV to over 6MeV and a dose range of high E10 to E17 is presented. The dose sensitivity of the instrument over a dose range (E13 – High E16) averages > 0.7 and as high as 1.0+. An optical reflectivity model is presented describing the measurement technique and its response due to ion implant.
148KB |
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Advances in Optical Densitometry for Low Dose Measurements
The move to sub 130nm devices has driven the need to have a wafer level, high sensitivity low dose mapping capability for all species on large diameter silicon wafers. Sheet resistance mapping systems do not provide the feature sensitivity and matching capability required for precision 1E11 to 1E13 doses.
284KB | |
